replacementmetalgate

由 R Singh 著作 · 2022 — In this work, we propose a novel asymmetric fin field-effect transistor (FinFET)-based access device, along with a process flow, at a 3-nm node.

由 R Bao 著作 · 2019 · 被引用 9 次 — Abstract. This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) ...

Imec is successfully testing and evaluating various options for further transistor scaling using high-k dielectrics and metal gates in a replacement metal ...

2009年12月10日 — 以Gate-first 而言，HK / MG 係於閘極成型之前即置入，而Gate-last 或稱Replacement metal gate，金屬閘極則是於多晶矽假閘極成型之後填入，旋即移除假閘 ...

由 A Veloso 著作 · 2014 · 被引用 12 次 — This work reports on aggressively scaled replacement metal gate, high-k last (RMG-HKL) planar and FinFET-based devices using a.

In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W ...

A replacement of high-k process was implemented on an independent double gate FinFET, following the ordinary gate-first process with minor modifications.

The described replacement gate process enables construction so that neither of the p-channel or n-channel transistor gate structures includes the metal gate ...

A method of fabricating a replacement metal gate structure for a CMOS device. The method includes forming a dummy gate structure on an nFET portion and a ...